![SR560 YANGJIE TECHNOLOGY - Diode: Schottky rectifying | THT; 60V; 5A; DO201AD; tape; Ufmax: 0.7V; SR560-YAN | TME - Electronic components SR560 YANGJIE TECHNOLOGY - Diode: Schottky rectifying | THT; 60V; 5A; DO201AD; tape; Ufmax: 0.7V; SR560-YAN | TME - Electronic components](https://ce8dc832c.cloudimg.io/v7/_cdn_/95/A1/00/00/1/6745_1.jpg?width=640&height=480&wat=1&wat_url=_tme-wrk_%2Ftme_new.png&wat_scale=100p&ci_sign=5c97b166b4f4d9f5a1e6420a8e1b26964a9b4cef)
SR560 YANGJIE TECHNOLOGY - Diode: Schottky rectifying | THT; 60V; 5A; DO201AD; tape; Ufmax: 0.7V; SR560-YAN | TME - Electronic components
![Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that](https://toppr-doubts-media.s3.amazonaws.com/images/4803840/fc0431b4-7f50-4450-b34d-2d62b955f96b.jpg)
Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that
![diodes - Why is the Vbe threshold of a Si NPN transistor 0.7V and not -0.7V? - Electrical Engineering Stack Exchange diodes - Why is the Vbe threshold of a Si NPN transistor 0.7V and not -0.7V? - Electrical Engineering Stack Exchange](https://i.stack.imgur.com/Ylzdu.png)
diodes - Why is the Vbe threshold of a Si NPN transistor 0.7V and not -0.7V? - Electrical Engineering Stack Exchange
![The silicon diode shown in the figure is rated for a maximum current of 100 mA . Calculate the minimum value of the resistance of the resistor to avoid breakdown of diode The silicon diode shown in the figure is rated for a maximum current of 100 mA . Calculate the minimum value of the resistance of the resistor to avoid breakdown of diode](https://dwes9vv9u0550.cloudfront.net/images/3890404/1b383604-5676-401c-9c7b-5bf8e09e3148.jpg)
The silicon diode shown in the figure is rated for a maximum current of 100 mA . Calculate the minimum value of the resistance of the resistor to avoid breakdown of diode
![circuit analysis - Half-wave recitifer diode (0.7v) problems - Electrical Engineering Stack Exchange circuit analysis - Half-wave recitifer diode (0.7v) problems - Electrical Engineering Stack Exchange](https://i.stack.imgur.com/wYKQe.png)
circuit analysis - Half-wave recitifer diode (0.7v) problems - Electrical Engineering Stack Exchange
![Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that](https://dwes9vv9u0550.cloudfront.net/images/4435926/e36b1b00-c051-4617-aaca-c3a22991c676.jpg)
Ge and Si diodes start conducting at 0.3 V and 0.7 V respectively. In the following figure if Ge diode connection are reversed, the value of Vo changes by : (assume that
![In the given circuit a silicon diode with knee voltage 0.7V is forward biased with a battery of e.m.f 8V. The current in the circuit is 40 mA. Find th - Sarthaks In the given circuit a silicon diode with knee voltage 0.7V is forward biased with a battery of e.m.f 8V. The current in the circuit is 40 mA. Find th - Sarthaks](https://learnqa.s3.ap-south-1.amazonaws.com/images/7327071091617551351678383910.png)
In the given circuit a silicon diode with knee voltage 0.7V is forward biased with a battery of e.m.f 8V. The current in the circuit is 40 mA. Find th - Sarthaks
![i) calculate the value of output voltage `V_(0)` and current `I` if silicon diode and germanium diode conduct at `0.7V` and `0.3 V` respectively. Fig - Sarthaks eConnect | Largest Online Education Community i) calculate the value of output voltage `V_(0)` and current `I` if silicon diode and germanium diode conduct at `0.7V` and `0.3 V` respectively. Fig - Sarthaks eConnect | Largest Online Education Community](https://learnqa.s3.ap-south-1.amazonaws.com/images/16116410388503936861611641038.png)
i) calculate the value of output voltage `V_(0)` and current `I` if silicon diode and germanium diode conduct at `0.7V` and `0.3 V` respectively. Fig - Sarthaks eConnect | Largest Online Education Community
![Ge and Si diodes start conducting at \\[0.3\\,{\\text{V}}\\] and \\[0.7 \\,{\\text{V}}\\] respectively. In the following figure if Ge diode connection are reversed, the value of \\[{{\\text{V}}_{\\text{o}}}\\] changes by: (assume that the Ge diode Ge and Si diodes start conducting at \\[0.3\\,{\\text{V}}\\] and \\[0.7 \\,{\\text{V}}\\] respectively. In the following figure if Ge diode connection are reversed, the value of \\[{{\\text{V}}_{\\text{o}}}\\] changes by: (assume that the Ge diode](https://www.vedantu.com/question-sets/c548906a-049a-4d47-bae6-2d2a9d0f53de5574612316842034532.png)
Ge and Si diodes start conducting at \\[0.3\\,{\\text{V}}\\] and \\[0.7 \\,{\\text{V}}\\] respectively. In the following figure if Ge diode connection are reversed, the value of \\[{{\\text{V}}_{\\text{o}}}\\] changes by: (assume that the Ge diode
![A diode made of silicon has a barrier potential of `0.7 V` and a current of `20 mA` passes through t - YouTube A diode made of silicon has a barrier potential of `0.7 V` and a current of `20 mA` passes through t - YouTube](https://i.ytimg.com/vi/tVSDiM5bPaM/maxresdefault.jpg)